Small Plasma Chamber Systems and Methods

ABSTRACT

A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed.

PRIORITY CLAIM

This application is a continuation of and claims priority from U.S.patent application Ser. No. 12/957,923 filed on Dec. 1, 2010 andentitled “Small Plasma Chamber Systems and Methods,” which isincorporated herein by reference in its entirety for all purposes. Thisapplication also claims priority to U.S. Provisional Patent ApplicationNo. 61/266,476, filed on Dec. 3, 2009, and entitled “Small PlasmaChamber Systems and Methods,” through U.S. patent application Ser. No.12/957,923 which claims priority from U.S. Provisional PatentApplication No. 61/266,476 filed on Dec. 3, 2009, both of which areincorporated herein by reference in their entirety for all purposes.

BACKGROUND

The present invention relates generally to plasma processing ofsubstrates, and more particularly, to methods and systems for plasmaprocessing of a portion of a substrate surface using a small plasmaprocessing chamber.

FIG. 1 is a typical plasma processing chamber 100. The typical plasmaprocessing chamber 100 encloses the entire substrate 102 to beprocessed. The substrate 102 is loaded into the processing chamber 100.The processing chamber 100 is then sealed and purged to evacuateundesired gases though the outlet 112. A pump 114 may assist in drawingout the undesired gases. Purge gases or processing gases may be pumpedinto the processing chamber 100 from a processing and/or purging gassource 120 coupled to an input port 122. The purge gases or processinggases may be pumped out the processing chamber 100 to dilute orotherwise remove the undesired gases.

An electrical connection is made to the substrate 102, typically throughan electrostatic chuck 104. A plasma signal source 108B is coupled tothe substrate 102, typically through the electrostatic chuck 104. Aplasma signal source 108A is coupled to an emitter 106 in the processingchamber.

The desired gas(es) at the desired pressures and flowrates are theninput to the processing chamber 100. The plasma 110 is initiated byoutputting a processing signal (e.g., RF) at the desired frequency andpotential from the signal source 108 and imparting the emitted energy tothe gases in the processing chamber 100. Ions 110A generated by theplasma directly impinge on the entire surface of the substrate 102. Theplasma 110 also generates heat which is absorbed at least in part by thesubstrate 102. The electrostatic chuck 104 can also cool the substrate102.

The typical plasma processing chamber 100 is larger than the substrate100 to be processed so that the entire substrate can be processed withinthe processing chamber at one time. As the typical plasma processingchamber 100 is increased in size the amount of purging gas and the timerequired to purge the processing chamber 100 increases. As a result, alarger processing chamber 100 has an increased purging time before andafter the substrate 102 is processed.

The throughput of the typical processing chamber 100 is substantiallydetermined by a sum of the substrate loading time, the preprocessingpurging time, the substrate processing time, the post-processing purgingtime and the unloading time. Therefore, the increased purging time ofthe larger processing chamber 100 decreases the throughput as the sizeof the substrate 102 increases.

The entire surface of the substrate 102 is processed (e.g., exposed tothe plasma 110) at the same time in the typical processing chamber 100.The plasma 110 must be sufficiently large enough to substantially evenlyexpose the entire surface of the substrate 102 at one time. As the sizeof the substrate 102 increases the amount of energy required to generatethe plasma 110 increases approximately with the square of the area ofthe surface of the substrate. As a result, the energy requirements forlarger substrates 102 increases and the throughput decreases.

In view of the foregoing, there is a need for improved plasma processingsystems and methods that is scalable to ever larger substrates withoutsacrificing throughput.

SUMMARY

Broadly speaking, the present invention fills these needs by providingimproved plasma processing systems and methods that are scalable to everlarger substrates without sacrificing throughput. It should beappreciated that the present invention can be implemented in numerousways, including as a process, an apparatus, a system, computer readablemedia, or a device. Other aspects and advantages of the invention willbecome apparent from the following detailed description, taken inconjunction with the accompanying drawings, illustrating by way ofexample the principles of the invention.

One embodiment provides a plasma deposition processing system includinga plasma deposition chamber. A substrate support for supporting asurface to be processed is in the chamber. A processing head includingan array of plasma microchambers is also in the chamber. Each of theplasma microchambers includes an open side disposed over at least afirst portion of the surface to be processed. The open side has an arealess than an entire area of the surface to be processed. A process gassource is coupled to the chamber to provide a process gas the array ofplasma microchambers. A radio frequency power supply is connected to atleast one electrode of the processing head. The array of plasmamicrochambers is configured to generate a plasma using the process gasto deposit a layer over the at least first portion of the surface to beprocessed.

The RF power supply can include a first setting that is proportional tothe internal plasma volume in the plasma microchamber. The RF powersupply can include a first power supply coupled to the plasmamicrochamber and a second RF power supply coupled to the substratesupport. The RF power supply can include a second setting correspondingto a desired plasma process to be conducted on the first portion of thesurface to be processed.

The substrate support can include a chucking area that is less than orequal an area of the surface to be processed. Only a portion of thesubstrate support can biased and wherein the biased portion of thesubstrate support is substantially aligned with the plasma microchamber.At least one of the array of plasma microchambers can be a movableplasma microchamber and the biased portion of the substrate support canbe movable for maintaining substantial alignment with the movable plasmamicrochamber.

A vacuum source can be coupled to at least one of the array of plasmamicrochambers. The vacuum source can be an adjustable vacuum source.

A sealing structure defined between the substrate support and theprocessing head, can also be included. The sealing structure can includea sealing ring. The sealing structure includes an outer chamber aroundthe microchamber.

An actuator can be coupled to at least one of the array of plasmamicrochambers, the actuator being configured to move the at least one ofthe array of plasma microchambers in a plane substantially parallel tothe surface to be processed and wherein the actuator being configured tomove the at least one of the array of plasma microchambers in one ormore of a rotational direction, an angular direction, a lineardirection, a non-linear direction, or a pivoting direction. The actuatorcan move the at least one of the array of plasma microchambers so as toalign the open side of the at least one of the array of plasmamicrochambers with a second portion of the surface to be processed.

The substrate support can include an edge ring that is adjacent to atleast a portion of an edge of a surface to be processed. At least aportion of the edge ring can be biased.

Each of the array of plasma microchambers can include one or more inletports and one or more outlet ports. The inlet ports can be coupled toone or more process gas sources. At least one of the inlet ports can becoupled to a purge gas source. At least one of the outlet ports can becoupled to a vacuum source.

At least one monitoring instrument can be coupled to the plasmamicrochamber and a controller. The controller can include at least onerecipe including at least one plasma processing operational parameterincluding at least one of a group consisting of a time interval, a DCbias applied to at least one electrode within at least one of the arrayof plasma microchambers, a voltage of an RF signal applied to at leastone electrode within at least one of the array of plasma microchambers,a frequency of an RF signal applied to at least one electrode within atleast one of the array of plasma microchambers, a power of an RF signalapplied to at least one electrode within at least one of the array ofplasma microchambers, a pressure within at least one of the array ofplasma microchambers, a flowrate of the at least one process gas, atemperature of the surface to be processed and/or a mixture ratio of theat least one process gas. The monitoring instrument can be directedtoward the surface to be processed.

An inner volume of the at least one of the array of plasma microchamberscan have a constant width along a length of the at least one of thearray of plasma microchambers. The inner volume of the at least one ofthe array of plasma microchambers can have a width that varies along alength of the at least one of the array of plasma microchambers. Theinner volume of the at least one of the array of plasma microchamberscan have a constant depth that along a length of at least one of thearray of plasma microchambers. The inner volume of the at least one ofthe array of plasma microchambers can have a depth that varies along alength of the at least one of the array of plasma microchambers. Theinner volume of the at least one of the array of plasma microchamberscan have an adjustable depth that is adjustable along a length of the atleast one of the array of plasma microchambers.

The array of plasma microchambers can have a linear arrangement. Thearray of plasma microchambers can have a rotary arrangement.

Another embodiment provides a method of performing a plasma depositionincluding placing a surface to be processed on a substrate support,injecting at least one process gas into a first plasma microchamber,forming a plasma in the first plasma microchamber, the first plasmamicrochamber having an open side process area that is aligned over afirst portion of the surface to be processed, the open side process areais less than an area of an entire surface to be processed. At least oneplasma product is generated in the first plasma microchamber at least aportion of the at least one plasma product is deposited on the firstportion of the surface to be processed.

The first plasma microchamber can be movable, relative to the surface tobe processed, until a second one of a plurality of portions of thesurface to be processed is aligned to the open side process area of thefirst plasma microchamber. Plasma byproducts can also be drawn out ofthe first plasma microchamber. The plasma byproducts are drawn out ofthe first plasma microchamber proximate to a top portion of the firstplasma microchamber. The plasma processing within the first plasmamicrochamber can also be monitored and the monitoring data can be inputto a controller coupled to the first plasma microchamber. At least oneplasma processing operational parameter can be modified corresponding tothe monitoring data received in the controller.

The at least one plasma processing operational parameter can include atleast one of a group consisting of a time interval, a DC bias applied toat least one electrode within the first plasma microchamber, a voltageof an RF signal applied to at least one electrode within the firstplasma microchamber, a frequency of an RF signal applied to at least oneelectrode within the first plasma microchamber, a power of an RF signalapplied to at least one electrode within the first plasma microchamber,a pressure within the first plasma microchamber, a flowrate of the atleast one process gas, a temperature of the surface to be processedand/or a mixture ratio of the at least one process gas. A second plasmamicrochamber can apply a second plasma process to a selected portion ofthe surface to be processed. The second plasma process can be differentthan the plasma deposition process performed in the first plasmamicrochamber. The second plasma process can be an plasma etch process.

The substrate support can have a chucking area that is less than orequal an area of the surface to be processed. The only a portion of thesubstrate support may be selectively biased such that the biased portionof the substrate support is substantially aligned with the plasmamicrochamber. The biased portion of the substrate support can be movablefor maintaining substantial alignment with the movable plasmamicrochamber.

The system can also include a sealing structure defined between thesubstrate support and the processing head. The sealing structure caninclude a sealing ring. The sealing structure can also or alternativelyinclude an outer chamber around the microchamber.

The system can also include an actuator coupled to the plasmamicrochamber, the actuator being configured to move the plasmamicrochamber in a plane substantially parallel to the surface to beprocessed. The actuator can move the plasma microchamber in one or moreof a rotational direction, an angular direction, a linear direction, anon-linear direction, or a pivoting direction. The actuator can move theplasma microchamber so as to align the open side of the plasmamicrochamber with a second portion of the surface to be processed.

The system can also include one or more monitoring instruments coupledto the plasma microchamber and a controller. The controller can includeone or more recipes for controlling the plasma processing operationalparameters such as a process time interval, a DC bias applied to atleast one electrode within the plasma microchamber, a voltage,frequency, or power of an RF signal applied to at least one electrodewithin the first plasma microchamber, a pressure within the plasmamicrochamber, a flowrate of a process material injected into the plasmamicrochamber, mixture ratios of the process materials and a temperatureof the surface to be processed, among other plasma processingoperational parameters. The monitoring instrument can be directed towardthe surface to be processed.

The inner volume of the plasma microchamber can have a constant and orvarying width and/or depth along a length of the plasma microchamber.The plasma deposition processing system can include multiple plasmamicrochambers that can be arranged in linear and/or rotary or othersuitable arrangements.

Another embodiment provides a method of performing a plasma depositionincluding placing a surface to be processed on a substrate support,injecting at least one process material into a plasma microchamber andforming a plasma in the plasma microchamber. The plasma microchamberhaving an open side process area that is aligned over a first portion ofthe surface to be processed. The open side process area is less than anarea of an entire surface to be processed. One or more plasma productsare generated in first plasma microchamber and at least a portion of theplasma products are deposited on the first portion of the surface to beprocessed.

The plasma microchamber can be moved, relative to the surface to beprocessed, until a second portion of the surface to be processed isaligned to the open side process area of the plasma microchamber. One ormore plasma byproducts can be drawn out of the plasma microchamber. Theplasma byproducts can be drawn out of the plasma microchamber proximateto a top portion of the plasma microchamber.

The method can also include monitoring the plasma processing within theplasma microchamber, inputting the monitoring data to a controllercoupled to the plasma microchamber and modifying at least one plasmaprocessing operational parameter corresponding to the monitoring datareceived in the controller.

The method can also include use of a second plasma microchamber suchthat the second plasma microchamber can apply a second plasma process toa selected portion of the surface to be processed. The second plasmaprocess can be the same or different than the plasma deposition processperformed in the first plasma microchamber. The second plasma processcan be a plasma etch process.

Other aspects and advantages of the invention will become apparent fromthe following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the principles ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings.

FIG. 1 is a typical plasma processing chamber.

FIGS. 2A-2C show embodiments of a plasma processing system that processselected portions of a full surface of the surface being processed inaccordance with embodiments of the present invention.

FIG. 2D is a flowchart diagram that illustrates the method operationsperformed in forming a plasma in the microchamber, in accordance withembodiments of the present invention.

FIGS. 3A-3F show detailed cross-sectional views of microchambers, inaccordance with embodiments of the present invention.

FIG. 3G is a top view of a microchamber, in accordance with embodimentsof the present invention.

FIG. 3H is a top view of a microchamber, in accordance with embodimentsof the present invention.

FIG. 3I is a top view of a microchamber, in accordance with embodimentsof the present invention.

FIG. 3J is a top view of a microchamber, in accordance with embodimentsof the present invention.

FIG. 3K is a top view of a microchamber, in accordance with embodimentsof the present invention.

FIG. 3L is a top view of a microchamber, in accordance with embodimentsof the present invention.

FIG. 3M is a top view of a microchamber, in accordance with embodimentsof the present invention.

FIGS. 3N-3P are lengthwise cross-sectional views of microchambers,respectively, in accordance with embodiments of the present invention.

FIGS. 4A-4C show a single processing head with multiple microchambers,in accordance with embodiments of the present invention.

FIG. 4D shows a single processing head with multiple microchambers, inaccordance with embodiments of the present invention.

FIG. 5 is a flowchart diagram that illustrates the method operationsperformed in processing a surface of the substrate with a processinghead having multiple processing chambers, in accordance with embodimentsof the present invention.

FIGS. 6A-6B show a simplified schematic of multiple station processtools, in accordance with embodiments of the present invention.

FIG. 7 shows a simplified schematic of a process tool, in accordancewith embodiments of the present invention.

FIG. 8 is a flowchart diagram that illustrates the method operationsperformed in processing substrates with a multiple processing headprocess tool, in accordance with embodiments of the present invention.

FIG. 9A shows multiple processing head process tools in a manufacturingsystem, in accordance with embodiments of the present invention.

FIG. 9B shows multiple processing head process tools in a manufacturingfacility, in accordance with embodiments of the present invention.

FIG. 10 is a block diagram of an exemplary computer system for carryingout the processing, in accordance with embodiments of the presentinvention.

FIG. 11A shows a schematic diagram of a processing head, in accordancewith embodiments of the present invention.

FIG. 11B shows a schematic diagram of a processing head, in accordancewith embodiments of the present invention.

FIG. 11C is a flowchart diagram that illustrates the method operationsperformed in forming a plasma in the microchamber 202A and moving themicrochamber and biasing corresponding portions of the dynamic chuck, inaccordance with one embodiment of the present invention.

FIG. 11D shows a schematic diagram of a processing head, in accordancewith embodiments of the present invention.

FIGS. 12A-12C are plasma microchambers, in accordance with embodimentsof the present invention.

FIG. 12D is a top view of a linear multiple microchamber system, inaccordance with embodiments of the present invention.

FIG. 12E is a side view of a linear multiple microchamber system, inaccordance with embodiments of the present invention.

FIG. 12F is a top view of a system including two, linear multiplemicrochamber systems feeding substrates to a cleaning line, inaccordance with embodiments of the present invention.

FIG. 12G is a top view of a system with two multiple fan-like shapemicrochambers, in accordance with embodiments of the present invention.

FIG. 12H is a graph of various plasma sources, in accordance withembodiments of the present invention.

FIG. 12I is a graph of plasma densities of various types of plasma, inaccordance with embodiments of the present invention.

DETAILED DESCRIPTION

Several exemplary embodiments for improved plasma processing systems andmethods that are scalable to ever larger substrates without sacrificingthroughput will now be described. It will be apparent to those skilledin the art that the present invention may be practiced without some orall of the specific details set forth herein.

I. Less than Full Surface Etch Processing

Present semiconductor processing is mostly focused on 200 mm and 300 mmsemiconductor wafers and flat panel substrates of different shapes andsizes. As the need for throughput grows, future semiconductor wafers andsubstrates will be larger, such as the next generation of semiconductorwafers that are 450 mm and larger. In the typical plasma processing, theplasma chamber volume grows much faster than the diameter of the waferintended to be process within the plasma chamber. As the volume of theplasma chamber increases the material costs of building the plasmachamber also increase. Also as the volume of the plasma chamberincreases, the plasma becomes more difficult to control and maintainconsistency throughout the chamber. Further, as the volume increases theenergy requirements to generate the plasma also increases thus drivingthe energy costs higher yet yielding less consistent results. Reducingthe volume of the plasma chamber reduces the materials required toproduce the plasma chamber and also increases consistency and reducesthe energy requirements. A small plasma chamber, e.g., a microchamber,is more easily scalable to larger and smaller area surfaces to beexposed to the plasma. It should be understood that the semiconductorsubstrate to be processed or exposed to the plasma can be any surfacesuch as a semiconductor substrate, a flat panel substrate of any shapeor size.

FIGS. 2A-2C show embodiments of a plasma processing system that processselected portions of a full surface of the surface being processed inaccordance with embodiments of the present invention. Referring now toFIG. 2A which shows a side view of one portion of the system 204Aincludes a microchamber 202A formed by a housing 230 having an internalvolume 231. The internal volume 231 is bounded on three sides by chamberinsert 230. The fourth side 203F of the internal volume 231 is formed bya portion of the surface being processed in this instance, a portion102A′ of the surface of the semiconductor substrate 102A.

The substrate 102A is supported on a chuck 201A. The chuck 201A can havea width equal to or slightly smaller than or slightly larger than thewidth of the substrate 102A. The chuck 201A can be heated or cooled asmay be desired for the processing of the surface of the substrate 102A.By way of example temperature control system 234 for heating or coolingis coupled to the chuck 210. The chuck 201A can also be coupled to abiasing source 232B. The chuck 201A can also be movable so as to movethe substrate 102A in various directions. By way of example, the chuck201A can rotate the substrate 102A. Alternatively or additionally, thechuck 201A can move the substrate 102A laterally relative to themicrochamber 202A and the chuck can move the substrate closer or furtheraway from the microchamber.

The microchamber 202A has multiple inlet and outlet ports 216A-216D thatare coupled to process material sources or purge and vacuum sources220A-220D. The process materials or purge are delivered to themicrochamber 202A via at least one of the inlet and outlet ports216A-216D, 216A′. As the plasma processing occurs in the microchamber202A the plasma byproducts are drawn away from the microchamber throughat least one of the inlet and outlet ports 216A-216D, 216A′.

The plasma is contained within the microchamber 202A by the physicalconstraints of the inner chamber surfaces and the flow of the gaseswithin the microchamber. The microchamber 202A is sealed around theperimeter of the surface being processed by seal 212.

The microchamber 202A is movable relative to the surface of thesubstrate 102A being processed. The microchamber 202A can be movable orstationary and the surface of the substrate 102A being processed can bemovable or stationary.

As shown in FIG. 2A, the substrate 102A has a width L1 and a cover 210has a width L2 that is sufficiently wide or long enough that thesubstrate and/or the microchamber 202A can move relative to one anotherso that the microchamber can pass over the entire surface of thesubstrate and remain between the seals 212. In this manner theenvironment in the space 214 is controlled by the process materialsand/or vacuum or gas flows provided via ports 216A-216D and 216A′.

The outlet ports 216A and 216B are located near an upper portion of themicrochamber 202A so as to draw out the plasma byproducts and minimizeinterference with the ions flowing from the plasma to the portion 102A′of the surface of the semiconductor substrate 102A.

The precise width of the minimal space 208A can be selected according tothe plasma processing being applied to the surface of the substrate. Oneor more ports 208B may be coupled to the minimal space 208A. A processmaterial or purge source and/or vacuum source 220E can be coupled to theport 208B. In this manner processing material can be delivered throughthe minimal space 208A and/or a vacuum can be applied to the port 208Bso as to aid in controlling the environment within the space 214.

Referring to FIG. 2B which shows a top view of the microchamber 202A. Aportion of the cover 210 is shown cut away so as to show the edge ring208 and the seal 212 around to the perimeter of the edge ring and thesubstrate 102A to be processed by the microchamber. It should beunderstood that the microchamber 202A is shown having a width W1 lessthan the width W2 of the substrate 102A be processed by the plasma,however this is merely an exemplary embodiment as will be shown infurther detail in other figures that the microchamber can have severaldifferent shapes, depths, widths, lengths and configurations. It shouldalso be understood that while the substrate 102A is shown in asubstantially round shape it should be understood that this is merely anexemplary shape and that the substrate can be in any suitable ordesirable shape and size. By way of example the substrate 102A can be anirregular shape or a square shape or an elliptical shape or any othershape that can be placed within a fixture so that the microchamber canbe moved over the surface of the substrate 102A.

Further as shown in FIG. 2B, an actuator 240 is coupled to themicrochamber 202A by a coupling arm 241. The actuator 240 is capable ofmoving the microchamber 202A relative to the surface of the substrate102A. As discussed above the cover 210 can move with the microchamber202A so as to maintain contact with and a seal to the seal 212. In thismanner the microchamber 202A can move relative to the surface of thesubstrate 102A and at the same time maintain a controlled environmentover the surface of the substrate.

The microchamber 202A can also include one or more insitu monitoringinstruments 211A-D. The insitu monitoring instruments 211A-D can beoptical surface scanning instruments, optical spectrum or brightnessanalysis instruments, or magnetic instruments or chemical analysisinstruments as are well known in the art. The insitu monitoringinstruments 211A-D are coupled to a system controller.

One or more of the insitu monitoring instruments 211A-D can analyze thesurface of the substrate before, during and/or after processing by themicrochamber 202A. By way of example, instrument 211A can measure thesurface of the substrate 102A and a controller can use the measurementfrom instrument 211A to determine the operational parameters of a plasmaprocess to apply to the surface of the substrate 102A.

Similarly, instrument 211C can measure the results of the plasmaprocessing of the surface. The measured results from instrument 211C canbe used by the controller to determine operational parameters and/oradditional processing that may be subsequently needed for the surface ofthe substrate 102A.

Further, instrument 211B can measure the results of the plasmaprocessing of the surface as the plasma is applied to the surface of thesubstrate. The measured results from instrument 211B can be used by thecontroller to determine operational parameters and/or additionalprocessing that can be applied to the surface of the substrate 102A asthe plasma is being applied to the surface of the substrate 102A.

One or more of the insitu monitoring instruments 211A-D can analyze theplasma byproducts. By way of example instrument 211D can measure theresults of the plasma processing of the surface as the plasma is appliedto the surface of the substrate by analyzing the plasma byproducts beingoutput from the microchamber 202A. The measured results from instrument211D can be used by the controller to determine operational parametersand/or additional processing that can be applied to the surface of thesubstrate 102A as the plasma is being applied to the surface of thesubstrate 102A of the substrate before, during and/or after processingby the microchamber 202A.

The insitu monitoring instruments 211A-D can be used by the controllerto measure results of the plasma processing and adjust plasmaoperational parameters accordingly to gain the desired result. Forexample, the measured results from one or more of the instruments 211A-Dmay indicate a longer or shorter plasma processing time is needed or agreater or lesser flowrate and/or pressure of one or more plasma sourcematerials or a change in biasing or frequency is needed or a change intemperature is needed to achieve the desired result.

The insitu monitoring instruments 211A-D can be used by the controllerto detect and map local and global non-uniformities on the surface ofthe substrate 102A. The controller can then direct the appropriatefollow-up processing to correct the detected non-uniformities. Thecontroller can also use the detected non-uniformities to adjust theplasma operational parameters for plasma processing subsequentsubstrates.

The microchamber 202A may include an optical view port for one or moreinstruments 211A-D to perform a spectrum analysis or brightness analysisof the plasma 244 inside the microchamber 202A. One or more of theinstruments 211A-D can be used to detect and endpoint of the plasmaprocessing.

The controller can also adjust plasma operational parameters tocompensate for a build-up of plasma by-products on the inner surfaces ofthe microchamber 202A. By way of example, one or more of the instruments211A-D can be used to monitor the plasma and the resulting plasmabyproduct build-up on the inner surfaces of the microchamber 202A.Similarly, the controller can adjust the plasma operational parametersto compensate for a build-up of plasma by-products on the inner surfacesof the microchamber 202A according to an operational sequence or a timeror a recipe in the controller or in response to a controller input(e.g., received from an operator). Adjusting the plasma operationalparameters to compensate for a build-up of plasma by-products on theinner surfaces of the microchamber 202A can also include adjusting theplasma operational parameters to remove the all or a portion of thebuild-up of plasma by-products on the inner surfaces of themicrochamber.

The controller can also adjust plasma operational parameters as thedistance D1 between the microchamber 202A and the surface of thesubstrate 102A varies. By way of example the D1 can be adjusted forvarious operational reasons or physical reasons and the plasmaoperational parameters can be adjusted to compensate for the differentdistance so as to achieve the desire result.

FIG. 2C is a more detailed side view of the microchamber 202A, inaccordance with embodiments of the present invention. FIG. 2D is aflowchart diagram that illustrates the method operations 250 performedin forming a plasma in the microchamber 202A, in accordance withembodiments of the present invention. The operations illustrated hereinare by way of example, as it should be understood that some operationsmay have sub-operations and in other instances, certain operationsdescribed herein may not be included in the illustrated operations. Withthis in mind, the method and operations 250 will now be described. In anoperation 252, the cover 210 is sealed over the substrate 102A bycompressing the seal 212 between the support 206 and the cover 210. Theseal 212 is compressed by moving the cover 210 in direction 227 ormoving the support 206 in direction 225 so that the cover 210 indirection 227 are moved toward each other so as to compress the seal 212between the cover 210 and the support 206.

In an operation 254, the microchamber 202A and space 214 are purged andor brought to vacuum. During a purge process, a purge material (e.g., aninert purge gas or liquid or vapor or other fluid or combinationsthereof) is delivered from one or more of the process material or purgesources 220A-D and/or 220A′ to at least one of the ports 216A-D and/or216B′.

In an operation 256, a process material 242 is provided by one or moreof the process material sources 220A-D and injected into the plasmachamber 202A through at least one of the ports 216A-D and/or 216B′. Byway of example, the process material 242 can be provided by one or moreof the process material sources 220A-D and injected into themicrochamber 202A through port 216B′. Providing the process material canalso include mixing two or more process materials insitu and on demand.The mixing can occur in a manifold or mixing point (not shown) outsidethe microchamber 202A. The mixing of the two or more plasma sourcematerials 220A′, 220A″ can also occur inside the microchamber 202A.

In an operation 258, a plasma signal (typically RF or microwave) isgenerated by a signal source 232A and applied to the antenna/coil 233and the chuck 201A at the desired frequency, voltage, waveform, dutycycle and current. In an operation 260 a plasma 244 generates ions 246and heat. The ions 246 and heat that interact with the first portion102A′ of the surface of the semiconductor substrate 102A and produceplasma byproducts 248.

In an operation 262, the plasma byproducts 248 are drawn out of themicrochamber 202A. The plasma byproducts 248 can be drawn out of themicrochamber 202A by applying a vacuum to at least one of the ports216A-D and/or 216B′. By way of example, a vacuum can be applied to ports216A-D and draw plasma byproducts 248A-C out of the microchamber 202A.Drawing the plasma byproducts 248A-C out of the microchamber 202Athrough ports 216A-D also draws the plasma byproducts 248A-C away fromthe ions 246 and the portion of the surface 102A′ being processed orexposed to plasma 244. Removing the plasma byproducts 248 from themicrochamber 202A reduces the possibility of the plasma byproductsinterfering with the ions 246 contacting the selected portion 102A′ ofthe surface of the substrate 102A. Removing the plasma byproducts 248from the microchamber 202A reduces the possibility of the plasmabyproducts attaching to the inner surfaces 203A-C of the microchamber202A. If the plasma byproducts 248 attach to and build up on the innersurfaces 203A-C of the microchamber 202A. Such buildup can change thearchitecture and overall shape of the microchamber which can causechanges in plasma 244 density and distribution within the microchamberand more specifically change the plasma density applied to the surfaceof the substrate 102A.

In an operation 264, the microchamber 202A can be moved in at least oneof directions 224, 224A, 226 and/or 226A relative to the substrate 102Auntil a subsequent portion 102A″ of the surface of the substrate isaligned with the microchamber. The microchamber 202A is then formed bythe inner surfaces 203A-E and the second portion 102A″ of the surface ofthe substrate 102A and the plasma is applied to the subsequent portion102A″ of the surface of the substrate 102A in an operation 266.

In an operation 268, if there are additional portions of the surface ofthe substrate to be processed, the method operations continue inoperations 264-266 as described above. If there are no additionalportions of the surface of the substrate to be processed, the methodoperations end.

An edge platform or edge ring 208 can also be included as shown in FIGS.2A-2C. The edge ring or platform 208 provides additional processingsurface where the microchamber 202A can be located during an initialplasma phase and a shut down of the plasma or any other time when theplasma can be operated but it is not desired to have the plasma incontact with the surface of the substrate 102A.

The edge ring or platform 208 is separated from the surface of thesubstrate 102A by a minimal space 208A. The edge ring or platform 208can be adjacent to the entire perimeter of the substrate 102A, as shown.Alternatively, the edge ring or platform 208 can be adjacent to only oneor more portions of the perimeter of the substrate. The edge ring orplatform 208 can be used with any shape substrate whether the substrateis round, rectangular or some other shape (irregular, any polygon,etc.). A partial edge ring or platform 208 is described in more detailin commonly owned U.S. Pat. No. 7,513,262, entitled “Substrate MeniscusInterface and Methods for Operation” by Woods, which is incorporated byreference herein, in its entirety and for all purposes.

The edge ring or platform 208 can perform several functions. Onefunction is a microchamber starting, stopping and “parking” location forthe microchamber or other processing chamber as described in U.S. Pat.No. 7,513,262.

Another function is to reduce the concentration of the plasma 244 on theedge of the substrate 102A. Without the edge ring 208, as a microchamberpasses onto the edge of the substrate 102A, the volume of themicrochamber would change considerably because the distance to that sideof the microchamber formed by the substrate would change by thethickness of the substrate 102A. This change in microchamber volume willchange the plasma concentration of ions and even the plasma shape.

Further, as the microchamber passes onto the edge of the substrate 102A,the ions 246 emitted from the plasma 244 and be focused on therelatively small area of the edge of the substrate 102A. As a result thereactivity of the ions 244 will also be focused on the relatively smallarea of the edge of the substrate 102A and the relative processingactivity would be greatly increased on the edge of the substrate 102A ascompared to other portions of the surface of the substrate.

With the edge ring or platform 208 maintained at substantially the samepotential as the substrate, the edge ring or platform 208 also maintainsa substantially constant microchamber plasma volume and a substantiallyconstant ion concentration as the plasma transitions from the edge ringor platform across the edge of the substrate 102A and fully onto thesurface of the substrate 102A.

The controller can also adjust the plasma parameters as the microchamber202A passes over and processes the edge of the substrate. Typically, theedge of the substrate includes a bevel edge portion that is nottypically used as part of the active device structures as it is used forhandling the substrate. Further, the bevel edge is typically rounded orbeveled and as such can change the volume of the microchamber as thebevel edge passes through the microchamber. As a result the controllercan also adjust the plasma parameters as the microchamber to process thebevel edge to achieve the desired result.

The edge ring 208 can be a sacrificial material that is processed by themicrochamber similar to the processing of the substrate 102A. The edgering can include multiple layers or portions. By way of example the edgering 208 can include a layer 208A. The layer 208A may be sacrificial andthe remaining portion of the edge ring substantially resistant to theplasma processing of the microchamber. Alternatively, the layer 208A maybe substantially impervious or resistant to the plasma processing of themicrochamber.

The microchamber 202A can also include an insitu mixing point ormanifold 221 where two or more plasma source materials 220A′, 220A″ canbe mixed as needed for use in the microchamber 202A. The insitu mixingpoint or manifold 221 can also include flow metering systems 221A forcontrolling the quantity, flowrate and pressures of the plasma sourcematerials 220A′, 220A″ so that the desired mixture can be createdimmediately before the mixture is input to the microchamber 202A.

The microchamber 202A can also include a temperature control system223A. The temperature control system 223A can heat or cool themicrochamber 202A and/or the plasma source materials 220A′ in themicrochamber. In this way the temperature of the microchamber 202Aand/or the plasma source materials 220A′ can be controlled.

While the described and illustrated embodiments are shown in ahorizontal orientation, it should be understood that the microchamber202A and be operated in any orientation. By way of example, themicrochamber 202A and be operated in an inverted orientation. Themicrochamber 202A and be operated in a vertical orientation or in anyangle between horizontal and vertical.

The substrate 102A can be rotated by the chuck 210 so that themicrochamber 202A can be passed over a first portion of the surface ofthe substrate (e.g., a first half or a first quadrant or other portion).Then the substrate 202A can be rotated so that the microchamber 202A canbe passed over a subsequent portion of the surface. The microchamber202A may be moved less in this manner as the rotated substrate may allowthe microchamber to move in an opposite direction for processing thesecond portion from the direction it moved while processing the firstportion of the surface of the substrate. This can reduce the overallsize of the cover 210 as the cover will not need to be larger than twicethe width of the substrate and can be possibly only slightly larger thanabout the width of the substrate 102A.

II. Microchambers

FIGS. 3A-3F show detailed cross-sectional views of microchambers202A.1-202A.6, in accordance with embodiments of the present invention.The microchambers 202A.1-202A.6 have various locations, numbers andarrangements of inlet and outlet ports 216A, 216B, 216A′, 216B′, 216A″,216B″. The microchambers 202A.1-202A.6 also have various cross-sectionalshapes. It should be understood these are merely exemplary shapes andport arrangements and combinations and fewer or greater numbers of portscan also be included. The angles formed by the inlet and outlet ports216A, 216B, 216A′, 216B′, 216A″, 216B″ relative to a centerline 305, asshown, are merely exemplary and the inlet and outlet ports may be angleddifferently than shown and in any suitable angle.

By way of example, microchamber 202A.1 includes two outlet ports 216A,216B and one inlet port 216B′. One outlet port 216A in a first side 203Ais near a top portion 203C of the microchamber 202A.1. Inlet port 216B′is located in the top portion 203C of the microchamber. A second outletport 216B is located further away from the top portion 203C in a side203B substantially opposite from the first side 203A.

With regard to shape: microchamber 202A.1 has a substantiallytrapezoidal cross-sectional shape; microchamber 202A.2 has asubstantially triangular cross-sectional shape; microchamber 202A.3 hasa rounded substantially triangular cross-sectional shape; microchamber202A.4 has a substantially rectangular cross-sectional shape;microchamber 202A.5 has a substantially U-cross-sectional shape;microchamber 202A.6 has a substantially rectangular cross-sectionalshape with rounded corners.

In a further example, the illustrated combination and shapes of themicrochambers 202A.1-6 and the corresponding arrangement of the inletand outlet ports 216A, 216B, 216A′, 216B′, 216A″, 216B″ are merelyexemplary combinations. By way of example the microchamber 202A.5 shownin FIG. 3E can include the port arrangement as shown in FIG. 3F or anycombination of port arrangements. In addition to shape, the size canalso be varied, to provide for more or less volume in the microchambers.

FIG. 3G is a top view of a microchamber 202A, in accordance withembodiments of the present invention. The microchamber 202A is similarto the microchambers described above and having a width W3 equal to orgreater than width W2 of the substrate 102A.

FIG. 3H is a top view of a microchamber 321A, in accordance withembodiments of the present invention. Microchamber 321A is similar tothe microchamber 202A shown in FIG. 2B except the microchamber 321A issubstantially round. Microchamber 321A can also include an instrument324 to monitor the operation of the microchamber.

FIG. 3I is a top view of a microchamber 321B, in accordance withembodiments of the present invention. Microchamber 321B is similar tothe microchamber 321A shown in FIG. 3H except the microchamber 321B isan annular microchamber forming a plasma in a substantially annularregion 322B. Only the corresponding annular portion 302A of the surfaceof the substrate 102A is exposed to the plasma in the annularmicrochamber 321B. The microchamber 321B can also include an instrument324 to monitor the operation of the microchamber.

FIG. 3J is a top view of a microchamber 321C, in accordance withembodiments of the present invention. Microchamber 321C has an arcedshape similar to but not necessarily the same curve as a portion of acurved edge of the substrate 102A. This allows for etch preparation ofthe wafer edge, such as to remove byproducts or buildups. This edgeprocessing can also be done after full wafer processing is completed andin conjunction with other wafer clean operations.

FIG. 3K is a top view of a microchamber 321D, in accordance withembodiments of the present invention. Microchamber 321D is substantiallysimilar to microchamber 202A as shown in FIG. 2B above, however themicrochamber 321D also includes a partial masking plate 331. The partialmasking plate 331 can selectively mask a portion of the surface of thesubstrate 102A from the plasma in the microchamber 321D. The partialmasking plate 331 can be fixed or movable relative to the microchamber321D. The actuator 240 can be coupled to the partial masking plate 331by a coupling arm 331A.

FIG. 3L is a top view of a microchamber 321E, in accordance withembodiments of the present invention. Microchamber 321E is substantiallysimilar to microchamber 321D as shown in FIG. 3K above, however themicrochamber 321E also includes a full masking plate 333. The fullmasking plate 333 includes an opening 335 that can selectively expose aportion of the surface of the substrate 102A to the plasma in themicrochamber 321E. The full masking plate 333 can be fixed or movablerelative to the microchamber 321E. The actuator 240 can be coupled tothe full masking plate 333 by a coupling arm 333A.

FIG. 3M is a top view of a microchamber 321F, in accordance withembodiments of the present invention. Microchamber 321F is substantiallysimilar to microchamber 202A as shown in FIG. 3G above, however themicrochamber 321F has a fan-like shape having a narrow first end 323Ahaving a width W4 and an opposite second end 323B, having a width W5,where W5 is wider than W4. W5 can be only slightly wider than W4 (e.g.,W5=101% of W4). W5 can also be multiples of W4 (e.g., W5+n*W4 wheren=any multiple, not necessarily an integer value between about 2 andabout 20). The ratio of W4 and W5 can be a function of a rotation of thesubstrate around a rotary table as will be described in more detailbelow so that the residence time of the substrate 102A at the first end323A is substantially the same as the residence time at the second end323B.

Microchamber 321F is coupled to an actuator 240 by coupling arm 241.Actuator 240 can pivot microchamber 321F in directions 350A, 350B tomove the microchamber into positions 312F′ to 312F″ and even further sothat the microchamber can be pivoted completely off of the substrate102A. In this manner the microchamber can be pivoted over the entiresurface of the substrate 102A.

FIGS. 3N-3P are lengthwise cross-sectional views of microchambers 321G,321H and 335, respectively, in accordance with embodiments of thepresent invention. Microchamber 321F has a constant depth D1 throughoutthe length of the microchamber. The depth of microchamber 321G variesalong the length from a depth D1 at a first end 313A to a depth D2 at asecond end 313B. The depth of microchamber 321G can be constantthroughout a first portion 313C of the microchamber and then vary alonga second portion 313D.

As shown in FIG. 3P, microchamber 335 has a variable depth and shapealong the length of the microchamber. The microchamber 335 includesmultiple depth and shape adjusters 331A-331L. The depth and shapeadjusters 331A-331L are coupled to an actuator 330 by links 332. Thedepth and shape adjusters 331A-331L can be moved in direction 334A or334B by actuator 330 to adjust a depth and shape of a correspondingportion 333A-333E of the microchamber. The depth and shape adjusters331A-331L can be moved laterally (e.g., into and out of the plane of theview shown in FIG. 3P) to vary the depth and shape of the microchamber335. The depth and shape adjusters 331A-331L can be biased at a desiredpotential or electrically isolated from the various potentials withinthe microchamber 335. The depth and shape adjusters 331A-331L can be anysuitable material or shape. The depth and shape of the microchamber 335can be adjusted to as desired to provide the desired plasma exposure tothe surface of the substrate 102A.

III. Multiple Chamber and Combination Chamber Head

FIGS. 4A-4C show a single processing head 402 with multiplemicrochambers 404A-C, in accordance with embodiments of the presentinvention. FIG. 4A is a top view of the processing head 402. FIG. 4B isa side sectional view of the processing head 402. FIG. 4C is a bottomview of the processing head 402.

Referring now to FIGS. 4A and 4B, the processing head 402 includes threeprocessing chambers 404A-C. The processing head 402 can move indirections 406A and 406B relative to the substrate 102A such that eachof the processing chambers 404A-C can be passed fully across the topsurface of the substrate 102A. The processing head 402 and the substrate102A can move in the same direction at different speeds. Alternatively,the processing head 402 and the substrate 102A can move in differentdirections the same or different speeds. Each of the each of theprocessing chambers 404A-C can apply a corresponding process to thesurface of the substrate 102A.

The processing chambers 404A-C are shown as being substantially similarin size, shape, distribution and function, however it should beunderstood that each one of the processing chambers may have a differentsize, shape and function. It should also be understood that eachprocessing head 404 can include any number from one or more processingchambers.

Processing chamber 404A may have a different length, width and/or depthas compared to the other processing chambers 404B, 404C. For example,processing chamber 404A may have a width less than the width of thesubstrate and processing chambers 404B and 404C have a width equal to orgreater than the width of the substrate.

Processing chamber 404A may have a different shape, e.g., rectangular,rounded, annular, etc. as compared to the other processing chambers404B, 404C. For example, processing chamber 404A may have a rectangularshape and processing chambers 404B and 404C have an oval or a roundedshape.

Processing chambers 404A-404C can be distributed differently around theprocessing head 402. For example, processing chamber 404A may be locatednear an edge of the processing head 402 and processing chambers 404B and404C are distributed in uneven spacing about the processing head.

Processing chamber 404A may have a different function, e.g., plasmaetch, plasma cleaning, passivation, non-plasma cleaning and or rinsing,etc. as compared to the other processing chambers 404B, 404C. Forexample, processing chamber 404A may have a passivation function andprocessing chambers 404B and 404C have different plasma etchingfunctions. In another example, one or more of the processing chambers404A-404C can be a proximity head cleaning station as described in moredetail in commonly owned U.S. Pat. No. 7,198,055, entitled “Meniscus,Vacuum, IPA Vapor, Drying Manifold” by Woods, and U.S. Pat. No.7,234,477, entitled “Method and apparatus for drying semiconductor wafersurfaces using a plurality of inlets and outlets held in close proximityto the wafer surfaces” by de Larios et al., and U.S. Pat. No. 7,069,937B2, entitled “Vertical Proximity Processor” by Garcia et al, and U.S.Pat. No. 6,988,327, entitled “Methods and Systems for Processing aSubstrate Using a Dynamic Liquid Meniscus” By Garcia et al, and theprogeny and related applications and patents, all of which areincorporated by reference herein, in their entirety and for allpurposes.

Referring now to FIG. 4C, the processing head 402 includes threeprocessing chambers 404A-C. The processing chambers 404A-C appear asopenings in the corresponding regions 408A-408C of the substantiallyflat bottom surface 402A of the processing head 402.

The processing head 402 can also include a barrier system 410 separatingeach processing chamber from the adjacent processing chamber. Thebarrier system 410 can be physical barrier such as a seal or anelectrical or magnetic field or a gas curtain and/or vacuum curtain orother fluid barrier.

Multiple processing chambers 404A-404C in the single processing head 402allows different processes to be conducted in each processing chamber.Further, one processing chamber may be used while a second processingchamber is cleaned without interrupting throughput.

FIG. 4D shows a single processing head 422 with multiple microchambers424A-D, in accordance with embodiments of the present invention. Theprocessing head 422 can rotate relative to the substrate 102A and thuspass the surface of the substrate 102A under at least one of theprocessing chamber in as little as a quarter turn (90 degree rotation).The processing head 422 and/or the substrate 102A can rotate indirections 426A and/or 426B. The processing head 422 and the substrate102A can rotate in the same direction at different speeds.Alternatively, the processing head 422 and the substrate 102A can rotatein opposing directions 426A and/or 426B at the same or different speeds.

FIG. 5 is a flowchart diagram that illustrates the method operations 500performed in processing a surface of the substrate 102A with aprocessing head having multiple processing chambers, in accordance withembodiments of the present invention. The operations illustrated hereinare by way of example, as it should be understood that some operationsmay have sub-operations and in other instances, certain operationsdescribed herein may not be included in the illustrated operations. Withthis in mind, the method and operations 500 will now be described. In anoperation 502, a first processing chamber is placed over a first portionof the substrate 102A. In an operation 504, a second processing chamberis placed over a second portion of substrate 102A. Additional processingchambers can be placed over corresponding additional portions of thesubstrate 102A.

In an operation 506, a first portion of substrate 102A is processed withthe first microchamber. In an operation 508, a second portion ofsubstrate 102A is processed with the second microchamber. Additionalprocessing chambers can process corresponding additional portions of thesubstrate 102A. It should be understood that the first and secondportions of the substrate 102A can be processed simultaneously or atdifferent times or for different lengths of time. Further, as describedabove, the process applied to each of the first and second portions ofthe substrate 102A can be the same or different.

In an operation 510, the first and second microchambers are moved oversubsequent portions of substrate 102A. The first and secondmicrochambers can be moved over subsequent portions of substrate 102Asimultaneously or at different times and rates of movement. The firstand second microchambers can be moved in the same or differentdirections. In an operation 512, the subsequent portions of substrate102A are processed with first and second microchambers.

In an operation 518, if additional portions of the substrate 102A needto be processed then the method operations continue in operation 510 asdescribed above. If no additional portions of the substrate 102A need tobe processed then the method operations can end.

IV. Multiple Station Tools

FIGS. 6A-6B show a simplified schematic of multiple station processtools 600, 640, in accordance with embodiments of the present invention.The redundancy of having multiple process heads 204A-204F, 244A-244F inthe process tools 600, 540 increases throughput and reliability as theprocess heads can be processing the substrates 102A-102H in parallel.The multiple process heads 204A-204F, 244A-244F can be any type ofprocessing heads or combinations thereof as described herein.

Referring to FIG. 6A, process tool 600 includes a rotary arrangement ofprocess heads 204A-204F. Each of the process heads 204A-204F includesone or more microchambers 202A-202F. Multiple substrates 102A-102F canbe supported and processed by corresponding ones of the process heads204A-204F. The process heads 204A-204F and/or the substrates 102A-102Fcan move so that the substrates can be processed by one or more of theprocess heads. The rotary process tool 600 rotates in directions 622Aand 622B. The rotary process tool 600 also includes a controller 612having a recipe for controlling the operation of the rotary processtool.

Referring to FIG. 6B, process tool 640 includes a linear arrangement ofprocess heads 244A-244F. Each of the process heads 244A-244F includesone or more microchambers 202A-202F. Multiple substrates 102A-102F canbe supported and processed by corresponding ones of the process heads204A-204F. The process heads 244A-244F and/or the substrates 102A-102Fcan move so that the substrates can be processed by one or more of theprocess heads. The linear process tool 600 can move the substratesand/or the process heads 244A-244F in directions 622C and 622D. Thelinear process tool 600 also includes a controller 612 having a recipefor controlling the operation of the linear process tool. The substrates102A-102F can also rotate about their axis at each one of the processheads 204A-204F, 244A-244F.

As described above, it should be understood that the process heads204A-204F, 244A-244F and/or the substrates 102A-102F can move in thesame or different directions and at different rates of movement.Actuator 240 can be a stepper motor, a pneumatic actuator, a hydraulicactuator, an electromechanical actuator, a piezoelectric actuator forfine movement and or vibrating or any other suitable types of actuators.

Each of the processing heads 204A-204F, 244A-244F can be applying thesame or different process to the substrates 102A-102H. Similar to as wasdescribed above with regard to multiple processing chambers in a singleprocessing head, each processing head 204A-204F, 244A-244F can apply arespective process. By way of example, a first processing head 204A,244A can apply a plasma etch process to the substrate 102A. Then thesubstrate 102A is moved to process head 204B, 244B where a finish plasmaetch process is applied. Then the substrate 102A is moved to processhead 204C, 244C where a proximity head cleaning is performed. One ormore of the processing heads 204A-204F, 244A-244F can apply apre-cleaning process such as cleaning the backside of substrate102A-102H to make sure the chuck properly contacts the substrate.

As the processing heads 204A-204F, 244A-244F and substrates 102A-102Hcan both be movable, then residence time for each substrate at eachprocessing head can vary. By way of example, processing head 204A moves12″ per minute and the substrate is stationary. As a result, therelative speed is 12″/min Processing head 204B also moves 12″ per minutein a first direction and the substrate 102B moves 12″ per minute in asecond, opposite direction, resulting in a relative speed of 24″ perminute. Similarly, processing head 204C moves in the first direction at11″/min and the substrate 102B moves in the same first direction at12″/min, yielding a relative speed of 1″/min. This type of differentspeed could be usable because in Processing head 204A and processinghead 204B the user desires a multiple rapid passes so that the substrate102A is etched in many thin layers so that the relative processing timeat station 1, 2 and 3 is approximately equal.

FIG. 7 shows a simplified schematic of a process tool 700, in accordancewith embodiments of the present invention. The process tool 700 includesthe rotary process tool 600, as shown, or a linear process tool 640, notshown. The process tool 700 also includes loading/unloading ports 702,704. The loading/unloading ports 702, 704 include load locks 712A-712D.

FIG. 8 is a flowchart diagram that illustrates the method operations 800performed in processing substrates 102A-102F with a multiple processinghead process tool 700, in accordance with embodiments of the presentinvention. The operations illustrated herein are by way of example, asit should be understood that some operations may have sub-operations andin other instances, certain operations described herein may not beincluded in the illustrated operations. With this in mind, the methodand operations 800 will now be described. In an operation 802,substrates 102A-102F are loaded into the multiple processing headprocess tool 700 through the loading/unloading ports 702, 704. All ofthe substrates 102A-102F can be loaded before processing begins.Alternatively, the substrates 102A-102F can be loaded sequentially asthe substrates are processed through the process heads 204A-204F,244A-244F. The substrates 102A-102F can be loaded sequentially or inbatches. By way of example, one or more substrates 102A-102F can beloaded through each of the loading/unloading ports 702, 704.

In an operation 804, the processing heads 204A-204F and 244A-244F aresealed over the substrates 102A-102F and purged for preparation forprocessing. In an operation 806, the substrates 102A-102F are processedby the respective processing heads 204A-204F. It should be understoodthat the processing heads 204A-204F and 244A-244F can process therespective substrates 102A-102F for the same or different time intervalsas described elsewhere herein. The respective substrates 102A-102F canbe process in parallel to provide improved throughput.

In an operation 808, the substrates 102A-102F are sequentially movedthrough the respective, subsequent processing heads 204A-204F and244A-244F or the unload port 702, 704. By way of example, substrate 102Ais progressed to processing head 204B and substrate 102B is progressedto processing head 204C and substrate 102C is progressed to processinghead 204D and substrate 102D is progressed to processing head 204E andsubstrate 102E is progressed to processing head 204F. As substrate 102Fhas progressed through all of the processing heads 204A-204F thenprocessing of substrate 102F complete and substrate 102F is thereforeprogressed to the load/unload port 702, 704. As a result processing head204A is left without a substrate.

In an operation 810 an inquiry is made to determine if there areadditional substrates (e.g., substrate 102L′) is available to be loaded.If substrate 102L′ is available to be loaded, then in operation 812,substrate 102L is loaded in head 204A and the method operations continuein operation 804 as described above.

If, in operation 810 there are no additional substrates available to beloaded then the method operations continue in operation 814. If thereare previously loaded substrates remaining to be processed, then themethod operations continue in operation 804 as described above. If thereare previously loaded substrates remaining to be processed, then themethod operations can end.

V. Multiple Station Tools Integrated in a Manufacturing Facility

FIG. 9A shows multiple processing head process tools 600, 640 in amanufacturing system 900, in accordance with embodiments of the presentinvention. The manufacturing system 900 includes a front opening unifiedpod (FOUP) transport system 938 for handling and transporting FOUPs930A-930J. The load/unload ports 702, 704 of the multiple processinghead process tools 600, 640 can accommodate a FOUP for handling andtransporting the substrates.

The controller 612 includes control subsystems for controlling theplasma signal 922, for controlling the actuator position 923, fordetecting the end points of the various processing 924, pressures andvacuum 925, process source controls 926 and the process recipe 614. Eachof the control subsystems are linked to the respective hardware portionsnecessary for executing the control. By way of example, the positioncontroller 923 is linked to the actuators and other movable portions ofthe multiple processing head process tools 600, 640. The controller 612also includes some suitable type of network interface 927 that providesa wired or wireless link 928 to a facility network 929.

FIG. 9B shows multiple processing head process tools 600, 640 in amanufacturing facility 950, in accordance with embodiments of thepresent invention. The multiple processing head process tools 600, 640and other process tools 952 are coupled by a network 927 to the facilitycontrol center 929. The facility control center 929 includes a centralcontroller 940 to provide a centralized access to the controllers 612 ofeach of the multiple processing head process tools 600, 640.

FIG. 10 is a block diagram of an exemplary computer system 1000 forcarrying out the processing, in accordance with embodiments of thepresent invention (e.g., the controller 612 and or the facilitycontroller 940, described above). The computer system 1000 includes adigital computer 1002, a display screen (or monitor) 1004, a printer1006, a floppy disk drive 1008, a hard disk drive 1010, a networkinterface 1012, and a keyboard 1014. The computer 1002 includes amicroprocessor 1016, a memory bus 1018, random access memory (RAM) 1020,read only memory (ROM) 1022, a peripheral bus 1024, and a keyboardcontroller (KBC) 1026. The computer 1002 can be a personal computer(such as an IBM compatible personal computer, a Macintosh computer orMacintosh compatible computer), a workstation computer (such as a SunMicrosystems or Hewlett-Packard workstation), or some other type ofcomputer.

The microprocessor 1016 is a general purpose digital processor, whichcontrols the operation of the computer system 1000. The microprocessor1016 can be a single-chip processor or can be implemented with multiplecomponents. Using instructions retrieved from memory, the microprocessor1016 controls the reception and manipulation of input data and theoutput and display of data on output devices.

The memory bus 1018 is used by the microprocessor 1016 to access the RAM1020 and the ROM 1022. The RAM 1020 is used by the microprocessor 1016as a general storage area and as scratch-pad memory, and can also beused to store input data and processed data. The ROM 1022 can be used tostore instructions or program code followed by the microprocessor 1016as well as other data.

The peripheral bus 1024 is used to access the input, output, and storagedevices used by the digital computer 1002. In the described embodiment,these devices include the display screen 1004, the printer device 1006,the floppy disk drive 1008, the hard disk drive 1010, and the networkinterface 1012. The keyboard controller 1026 is used to receive inputfrom keyboard 1014 and send decoded symbols for each pressed key tomicroprocessor 1016 over bus 1028.

The display screen 1004 is an output device that displays images of dataprovided by the microprocessor 1016 via the peripheral bus 1024 orprovided by other components in the computer system 1000. The printerdevice 1006, when operating as a printer, provides an image on a sheetof paper or a similar surface. Other output devices such as a plotter,typesetter, etc. can be used in place of, or in addition to, the printerdevice 1006.

The floppy disk drive 1008 and the hard disk drive 1010 can be used tostore various types of data. The floppy disk drive 1008 facilitatestransporting such data to other computer systems, and hard disk drive1010 permits fast access to large amounts of stored data.

The microprocessor 1016 together with an operating system operate toexecute computer code and produce and use data. The computer code anddata may reside on the RAM 1020, the ROM 1022, or the hard disk drive1010. The computer code and data could also reside on a removableprogram medium and loaded or installed onto the computer system 1000when needed. Removable program media include, for example, CD-ROM,PC-CARD, floppy disk, flash memory, optical media and magnetic tape.

The network interface 1012 is used to send and receive data over anetwork connected to other computer systems. An interface card orsimilar device and appropriate software implemented by themicroprocessor 1016 can be used to connect the computer system 1000 toan existing network and transfer data according to standard protocols.

The keyboard 1014 is used by a user to input commands and otherinstructions to the computer system 1000. Other types of user inputdevices can also be used in conjunction with the present invention. Forexample, pointing devices such as a computer mouse, a track ball, astylus, or a tablet can be used to manipulate a pointer on a screen of ageneral-purpose computer.

With the above embodiments in mind, it should be understood that theinvention may employ various computer-implemented operations involvingdata stored in computer systems. These operations are those requiringphysical manipulation of physical quantities. Usually, though notnecessarily, these quantities take the form of electrical or magneticsignals capable of being stored, transferred, combined, compared, andotherwise manipulated. Further, the manipulations performed are oftenreferred to in terms, such as producing, identifying, determining, orcomparing.

Any of the operations described herein that form part of the inventionare useful machine operations. The invention also relates to a device oran apparatus for performing these operations. The apparatus may bespecially constructed for the required purposes, or it may be a generalpurpose computer selectively activated or configured by a computerprogram stored in the computer. In particular, various general purposemachines may be used with computer programs written in accordance withthe teachings herein, or it may be more convenient to construct a morespecialized apparatus to perform the required operations. An exemplarystructure for the invention is described below.

The embodiments of the present invention can also be defined as amachine that transforms data from one state to another state. Thetransformed data can be saved to storage and then manipulated by aprocessor. The processor thus transforms the data from one thing toanother. Still further, the methods can be processed by one or moremachines or processors that can be connected over a network. Eachmachine can transform data from one state or thing to another, and canalso process data, save data to storage, transmit data over a network,display the result, or communicate the result to another machine.

The invention can also be embodied as computer readable code and/orlogic on a computer readable medium. The computer readable medium is anydata storage device that can store data which can thereafter be read bya computer system. Examples of the computer readable medium include harddrives, network attached storage (NAS), logic circuits, read-onlymemory, random-access memory, CD-ROMs, CD-Rs, CD-RWs, magnetic tapes,and other optical and non-optical data storage devices. The computerreadable medium can also be distributed over a network coupled computersystems so that the computer readable code is stored and executed in adistributed fashion.

It will be further appreciated that the instructions represented by theoperations in the above figures are not required to be performed in theorder illustrated, and that all the processing represented by theoperations may not be necessary to practice the invention. Further, theprocesses described in any of the figures can also be implemented insoftware stored in any one of or combinations of the RAM, the ROM, orthe hard disk drive.

VI. Dynamic Chuck

FIG. 11A shows a schematic diagram of a processing head 1100, inaccordance with embodiments of the presenting invention. The processinghead 1100 includes a single microchamber 202A shown in four positions1102A.1-1102A.4 relative to the substrate 102A. The chuck 201A issupporting the substrate 102A. The biasing source 232B provides a biaspower at the desired frequency (bias signal 1104) to the chuck 201A. Thebias signal 1104 is applied to the substrate 102A though contact betweenthe substrate and surface of the chuck 201A. The microchamber 202A emitsthe electromagnetic energy 1103A from the plasma 244 from the open side1101 of the microchamber (e.g., toward the substrate 102A and/or towardthe edge ring 208).

In position 1102A1, the electromagnetic energy 1103A is directedsomewhat toward the edge ring 208 however, as the current path leadsthrough the substrate 102A to the chuck 201A, then at least some of thecurrent is pulled toward the edge of the substrate 102A. This currentalso pulls the ions toward the edge of the substrate 102A. As a resultthe edge and the region adjacent to the edge of the substrate can gainadditional processing time and residence time as compared to otherportions of the substrate 102A.

As the microchamber 202A is moved from position 1102A.1 to position1102A.2, the current path 1103A.2 leads substantially straight throughthe substrate 102A to the chuck 201A. Similarly, as the microchamber202A is moved from position 1102A.2 to position 1102A.3, the currentpath 1103A.3 leads substantially straight through the substrate 102A tothe chuck 201A.

As the microchamber 202A is moved from position 1102A.3 to position1102A.4, the current path 1103A.4 leads substantially straight throughthe substrate 102A to the chuck 201A but possibly not as uniformlytoward the edge ring 208. This current can also pull some of the ionstoward the edge of the substrate 102A. As a result the edge and theregion adjacent to the edge of the substrate can gain additionalprocessing time and residence time as compared to other portions of thesubstrate 102A

FIG. 11B shows a schematic diagram of a processing head 1110, inaccordance with embodiments of the presenting invention. The processinghead 1110 includes an dynamic chuck 1108. The dynamic chuck 1108provides the support and the biasing to the opposite side of thesubstrate 102A and to the edge ring 208. A relatively thin layer ofsupport material 1106 is provided between the chuck 201A and thesubstrate 102A. A relatively thin layer of support material 1106A isprovided and between the chuck 201A and the edge ring 208. The supportmaterial 1106, 1106A can be one piece. Alternatively, the supportmaterial 1106, 1106A can be separate.

The chuck 1108 reduces the concentrating of the ions at the edges of thesubstrate 102A as described above. The dynamic chuck 1108 can furtherreduce concentration of the ions at the edges of the substrate 102A andalso gain electrical efficiencies. As the microchamber 202A only needsthe corresponding portion of the edge ring 208 and/or the substrate 102Ato be biased.

FIG. 11C is a flowchart diagram that illustrates the method operations1150 performed in forming a plasma in the microchamber 202A and movingthe microchamber and biasing corresponding portions of the dynamic chuck1108, in accordance with one embodiment of the present invention. Theoperations illustrated herein are by way of example, as it should beunderstood that some operations may have sub-operations and in otherinstances, certain operations described herein may not be included inthe illustrated operations. With this in mind, the method and operations1150 will now be described. In an operation 1152 a plasma is formed inthe microchamber 202A in position 1102A.1. In an operation 1154, thedynamic chuck 1108 need only bias corresponding portion 1104A.1 of thedynamic chuck so that the corresponding portion 1109A.1 of the edge ring208 is biased. As a result the current path and ion path issubstantially restricted to only the corresponding portion 1109A.1 ofthe edge ring 208 between the microchamber 202A and the correspondingportion 1104A.1 of the dynamic chuck 1108.

In an operation 1156, the microchamber is moved to a subsequent position1102A.2. In an operation 1158, the dynamic chuck 1108 need only biascorresponding portion 1104A.2 of the dynamic chuck so that thecorresponding portion 1109A.2 of the substrate 102A is biased. As aresult the current path and ion path is substantially restricted to onlythe corresponding portion 1109A.2 of the substrate 102A between themicrochamber 202A and the corresponding portion 1104A.2 of the dynamicchuck 1108.

The method operations continue in operations 1156 and 1158 forsubsequent portions of the substrate and/or edge ring 208 and the methodoperations can end. For example, as the microchamber is moved toposition 1102A.3, the dynamic chuck 1108 need only bias correspondingportion 1104A.3 of the dynamic chuck so that the corresponding portion1109A.3 of the substrate 102A is biased. As a result the current pathand ion path is substantially restricted to only the correspondingportion 1109A.3 of the substrate 102A between the microchamber 202A andthe corresponding portion 1104A.3 of the dynamic chuck 1108.

As the microchamber is moved to position 1102A.4, the dynamic chuck 1108need only bias corresponding portion 1104A.4 of the dynamic chuck sothat the corresponding portion 1109A.4 of the substrate 102A and theedge ring 208 is biased. As a result the current path and ion path issubstantially restricted to only the corresponding portion 1109A.4 ofthe substrate 102A between the microchamber 202A and the correspondingportion 1104A.4 of the dynamic chuck 1108.

Biasing only the corresponding portions of the dynamic chuck 1106reduces the energy requirements of biasing and also provides a morecontrolled flow of the ions from the plasma to the substrate. Thedynamic chuck 1106 can include a many electrically separate portionsthat can be selectively biased so that only those areas of the substrate102A that require biasing at any given time can be selectively biased.The many electrically separate portions that can be selectively biasedvia a matrix similar to a well known memory matrix type systems. Othersystems such as addressable electrically separate portions of thedynamic chuck 1106 can be implemented.

FIG. 11D shows a schematic diagram of a processing head 1120, inaccordance with embodiments of the presenting invention. The dynamicchuck 1108 includes a movable portion 1124 of the dynamic chuck that canbe moved corresponding locations (e.g., 1104A.1-1104A.4, etc.) to thelocation (e.g., locations 1102A.1-1102A.4, etc.) of the microchamber202A. An actuator 1122 is coupled to the movable portion 1124 by link1121. The actuator 1122 moves the movable portion 1124 as needed. Themovable portion 1124 of the dynamic chuck can be the only portion of thedynamic chuck that is biased and thus the biased movable portion can bemoved to correspond to microchamber location and the remaining portionof the substrate support 1106 and edge ring support 1106A are not biasedunless aligned with the microchamber 202A.

While the processing head 1100, 1120 is described above with only onemicrochamber 202A, it should be understood that the processing head1100, 1120 can include multiple microchambers as described herein.Correspondingly, dynamic chuck 1108 can have multiple movable orations1104A and/or the multiple portions that can be selectively biased thatcan be substantially aligned and correspond with each one of themultiple microchamber 202A in the processing head 1100, 1120.

FIGS. 12A-12C are plasma microchambers 1200, 1210, 1220, in accordancewith embodiments of the present invention. FIG. 12D is a top view of alinear multiple microchamber system 1240, in accordance with embodimentsof the present invention. FIG. 12E is a side view of a linear multiplemicrochamber system 1250, in accordance with embodiments of the presentinvention. FIG. 12F is a top view of a system 1260 including two, linearmultiple microchamber systems 1262, 1262 feeding substrates to acleaning line 1266, in accordance with embodiments of the presentinvention. FIG. 12G is a top view of a plasma processing system 1270with two multiple fan-like shape microchambers, in accordance withembodiments of the present invention. The plasma processing system 1270includes two microchambers Chem1 and Chem2. Microchamber Chem1 is aplasma etch microchamber. Microchamber Chem2 is a plasma depositionmicrochamber. Therefore FIG. 12G illustrates a deposition process(Chem2) over the surface of the wafer utilizing at least onemicrochamber. FIG. 12H is a graph 1280 of various plasma sources, inaccordance with embodiments of the present invention. FIG. 12I is agraph 1290 of plasma densities of various types of plasma, in accordancewith embodiments of the present invention.

Although the foregoing invention has been described in some detail forpurposes of clarity of understanding, it will be apparent that certainchanges and modifications may be practiced within the scope of theappended claims. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the invention is notto be limited to the details given herein, but may be modified withinthe scope and equivalents of the appended claims.

What is claimed is:
 1. A chamber, comprising: a substrate supportdisposed in the chamber, the substrate support configured for supportinga surface to be processed; a processing head disposed in the chamber,the processing head including an array of plasma microchambers, each ofthe plasma microchambers having an internal plasma volume and an openside, the open side of each of the plasma microchambers is configured tobe disposed over at least a first portion of the surface to beprocessed, the open side of each of the plasma microchambers having anarea that is less than an entire area of the surface to be processed; aprocess gas source, coupled to the chamber, so that a process gas isprovided to each of the array of plasma microchambers, the process gasused to deposit a layer on the surface to be processed; and a radiofrequency (RF) power supply connected to at least one electrode of theprocessing head, the array of plasma microchambers is configured togenerate a plasma using the process gas to deposit the layer over the atleast first portion of the surface to be processed.
 2. The system ofclaim 1, wherein the RF power supply includes a first setting that isproportional to the internal plasma volume in the plasma microchamber.3. The system of claim 1, wherein the RF power supply includes a firstpower supply coupled to the plasma microchamber and a second RF powersupply coupled to the substrate support.
 4. The system of claim 1,wherein the RF power supply includes a second setting corresponding to adesired plasma process to be conducted on the first portion of thesurface to be processed.
 5. The system of claim 1, wherein the substratesupport has a chucking area that is less than or equal an area of thesurface to be processed.
 6. The system of claim 5, wherein only aportion of the substrate support is biased and wherein the biasedportion of the substrate support is substantially aligned with theplasma microchamber.
 7. The system of claim 6, wherein at least one ofthe array of plasma microchambers is a movable plasma microchamber andthe biased portion of the substrate support is movable for maintainingsubstantial alignment with the movable plasma microchamber.
 8. Thesystem of claim 1, further comprising a vacuum source coupled to atleast one of the array of plasma microchambers.
 9. The system of claim8, wherein the vacuum source is an adjustable vacuum source.
 10. Thesystem of claim 1, further comprising a sealing structure definedbetween the substrate support and the processing head.
 11. The system ofclaim 10, wherein the sealing structure includes a sealing ring.
 12. Thesystem of claim 10, wherein the sealing structure includes an outerchamber around the microchamber.
 13. The system of claim 1, furthercomprising an actuator coupled to the at least one of the array ofplasma microchambers, the actuator being configured to move the at leastone of the array of plasma microchambers in a plane substantiallyparallel to the surface to be processed and wherein the actuator beingconfigured to move the at least one of the array of plasma microchambersin one or more of a rotational direction, an angular direction, a lineardirection, a non-linear direction, or a pivoting direction.
 14. Thesystem of claim 1, wherein at least one of the array of plasmamicrochambers is movable relative to the surface to be processed andfurther comprises an actuator connected to the movable at least one ofthe array of plasma microchambers, the actuator configured to move themovable at least one of the array of plasma microchambers so as to alignthe open side of the movable at least one of the array of plasmamicrochambers with a second portion of the surface to be processed. 15.The system of claim 1, wherein the substrate support includes an edgering wherein the edge ring is adjacent to at least a portion of an edgeof a surface to be processed.
 16. The system of claim 15, wherein atleast a portion of the edge ring is biased.
 17. The system of claim 1,wherein each of the array of plasma microchambers includes a pluralityof inlet ports and a plurality of outlet ports.
 18. The system of claim17, wherein at least one of the plurality of inlet ports is coupled toone of a plurality of process gas sources.
 19. The system of claim 17,wherein at least one of the plurality of inlet ports are coupled to apurge gas source.
 20. The system of claim 17, wherein at least one ofthe plurality of outlet ports are coupled to a vacuum source.
 21. Thesystem of claim 1, further comprising at least one monitoring instrumentcoupled to the plasma microchamber and a controller.
 22. The system ofclaim 21, wherein the controller includes at least one recipe includingat least one plasma processing operational parameter including at leastone of a group consisting of: a time interval; a DC bias applied to atleast one electrode within at least one of the array of plasmamicrochambers; a voltage of an RF signal applied to at least oneelectrode within at least one of the array of plasma microchambers; afrequency of an RF signal applied to at least one electrode within atleast one of the array of plasma microchambers; a power of an RF signalapplied to at least one electrode within at least one of the array ofplasma microchambers; a pressure within at least one of the array ofplasma microchambers; a flowrate of the at least one process gas; atemperature of the surface to be processed; and/or a mixture ratio ofthe at least one process gas.
 23. The system of claim 21, wherein themonitoring instrument is directed toward the surface to be processed.24. The system of claim 1, wherein an inner volume of the at least oneof the array of plasma microchambers has a constant width along a lengthof the first plasma microchamber.
 25. The system of claim 1, wherein aninner volume of the at least one of the array of plasma microchambershas a width that varies along a length of the at least one of the arrayof plasma microchambers.
 26. The system of claim 1, wherein an innervolume of the at least one of the array of plasma microchambers has aconstant depth that along a length of at least one of the array ofplasma microchambers.
 27. The system of claim 1, wherein an inner volumeof the at least one of the array of plasma microchambers has a depththat varies along a length of the at least one of the array of plasmamicrochambers.
 28. The system of claim 1, wherein an inner volume of theat least one of the array of plasma microchambers has a depth that isadjustable along a length of the at least one of the array of plasmamicrochambers.
 29. The system of claim 1, wherein the array of plasmamicrochambers have a linear arrangement.
 30. The system of claim 1,wherein the array of plasma microchambers have a rotary arrangement. 31.A method of performing a plasma deposition comprising: placing a surfaceto be processed on a substrate support; injecting at least one processgas into a first plasma microchamber; forming a plasma in the firstplasma microchamber, the first plasma microchamber having an open sideprocess area that is aligned over a first portion of the surface to beprocessed, the open side process area is less than an area of an entiresurface to be processed; generating at least one plasma product in thefirst plasma microchamber; and depositing at least a portion of the atleast one plasma product on the first portion of the surface to beprocessed.
 32. The method of claim 31, further comprising moving thefirst plasma microchamber, relative to the surface to be processed,until a second one of a plurality of portions of the surface to beprocessed is aligned to the open side process area of the first plasmamicrochamber.
 33. The method of claim 31, further comprising drawing aplurality of plasma byproducts out of the first plasma microchamber. 34.The method of claim 33, wherein the plurality of plasma byproducts aredrawn out of the first plasma microchamber proximate to a top portion ofthe first plasma microchamber.
 35. The method of claim 31, furthercomprising: monitoring the plasma processing within the first plasmamicrochamber; inputting the monitoring data to a controller coupled tothe first plasma microchamber; and modifying at least one plasmaprocessing operational parameter corresponding to the monitoring datareceived in the controller.
 36. The method of claim 35, wherein the atleast one plasma processing operational parameter includes at least oneof a group consisting of: a time interval; a DC bias applied to at leastone electrode within the first plasma microchamber; a voltage of an RFsignal applied to at least one electrode within the first plasmamicrochamber; a frequency of an RF signal applied to at least oneelectrode within the first plasma microchamber; a power of an RF signalapplied to at least one electrode within the first plasma microchamber;a pressure within the first plasma microchamber; a flowrate of the atleast one process gas; a temperature of the surface to be processed;and/or a mixture ratio of the at least one process gas.
 37. The methodof claim 31, further comprising a second plasma microchamber wherein thesecond plasma microchamber applies a second plasma process to a selectedportion of the surface to be processed.
 38. The method of claim 37,wherein the second plasma process is different than the plasmadeposition process performed in the first plasma microchamber.
 39. Themethod of claim 37, wherein the second plasma process is a plasma etchprocess.